785nm 80mW Semiconductor Raman Laser Sourcce Spectral Linewidth 0.01nm

785nm 80mW Semiconductor Raman Laser Sourcce Spectral Linewidth 0.01nm [Lead Time] 785nm 80mW Raman Laser: 3~4 weeks [Features] 1. Spectral linewidth: <0.01nm 2. High power stability: <3% [Application] 2. Raman spectroscopy 2. Sensing [Specifications] Product Name: 785nm Raman Laser Wavelength: 785nm Output Power: 80mW Spectral Linewidth：<0.01nm Beam Size: Near 1*2.5 mm Beam Divergence Angle: Near 1 mrad Operating Temperature: 0°C-40°C Storage Temperature: -40°C-85°C Parameter Work condition Symbol Min. Typical Value Max. Unit Output Power APC mode PO 80 mW Beam Diameter Po , 1/e2 DiaV 2.5 mm DiaH 1 mm Power Stability 2hrs Ps 3 % Spectral Linewidth FWHM PO 0.01 nm Spectral Stability λs PO 0.01 nm/°C Central Wavelength @PO λc 784 785 796 nm Service Life @PO MTBF 10000 Hrs SKU: P582 Categories: 785nm Raman Laser, 785nm Semiconductor Laser Tags: 785nm laser, raman laser, semiconductot laser